EDN

Toshiba, IBM, and AMD Develop World’s Smallest FinFET SRAM Cell with High-k/Metal Gate

TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...
Semiconductor Engineering

SRAM Cell Scaling With Monolithic 3D Integration Of 2D FETs (Penn State)

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
Electronic Design

Crolles2 Alliance reveals ultra-dense SRAM cell in 45 nm conventional bulk CMOS

The Crolles2 Alliance, which includes Freescale Semiconductor, Philips and STMicroelectronics, has created six-transistor SRAM-bit cells with an area of less than 0.25 square microns, or about half ...
TechSpot

CPU and GPU SRAM caches are not shrinking, which could increase chip cost or reduce performance

Why it matters: An interesting article posted at WikiChip discusses the severity of SRAM shrinkage problems in the semiconductor industry. Manufacturer TSMC is reporting that its SRAM transistor ...