EDN

Synopsys Implementation Solution Included in TSMC 16-nm Reference Flow for FinFET Design

Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced delivery of a comprehensive design ...
Nasdaq

Samsung Foundry Certifies Synopsys Design Compiler NXT for 5/4nm FinFET Process Technologies

Customers adopting Design Compiler NXT report significant reduction in runtimes together with improvements in power, performance and area (PPA) New advanced optimizations, such as concurrent clock and ...
Nasdaq

GLOBALFOUNDRIES Qualifies Synopsys Fusion Design Platform on 12LP FinFET Platform

Qualification includes leading products Design Compiler NXT, IC Compiler II, StarRC, PrimeTime, and IC Validator Collaboration delivers a combination of accuracy and highest performance with Fusion ...
insideHPC

TSMC Offers Its FinFET Technology to Academia for IC Design Skills Development

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...
Business Wire

Cadence Achieves EDA Certification for TSMC 5nm and 7nm+ FinFET Process Technologies to Facilitate Mobile and HPC Design Creation

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
Nature

Low Power Design in CMOS and FinFET Logic Circuits

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
Purdue University

New 'finFET' promising for smaller transistors, more powerful chips

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
Semiconductor Engineering

Stress-Related Local Layout Effects In FinFET Technology And Device Design Sensitivity

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Business Wire

Faraday Unveils Design Implementation Services for FinFET Technology Targeting All Foundries

HSINCHU, Taiwan--(BUSINESS WIRE)--Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, announced its debut of its design implementation services for FinFET ...
Semiconductor Engineering

ESD Co-Design For High-Speed SerDeS In FinFET Technologies

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device ...
EDN

Scaling down on the wings of a FinFET-DGCMOS

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.