A tiny change at the boundary between two oxide layers may point to a less power-hungry future for artificial intelligence.

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

Researchers have developed a new kind of nanoelectronic device that could dramatically cut the energy consumed by artificial ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

This year, there won't be enough memory to meet worldwide demand because powerful AI chips made by the likes of Nvidia, AMD and Google need so much of it. Prices for computer memory, or RAM, are ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...